Wafer Charging Monitors, Inc.

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Download Full text can be downloaded in PDF format and viewed with Acrobat Reader version 4.0 or higher. (You can download a free copy of Adobe® Acrobat® Reader by using the link at the bottom of this page.) (187 KB) Vol. 6, No. 1 (Summer 2003)   Automated ChargeMap ready for release!   Feature Article: Electron-shading effects in plasmas and high-current ion implanters.   ·  Uniform vs. non-uniform plasmas   ·  When there is no resist -- sputter pre-cleans   ·  PFS-equipped high-current ion implanters (559 KB) Vol. 5, No. 1 (Summer 2002)   Feature Article:  Sources of Plasma Charging Damage in High Density Etchers   ·  Non-Uniform Plasma -- top-to-bottom power ratio too low   ·  Improperly Adjusted Lifter Pins -- yield loss in center of wafer   ·  Monopolar Electrostatic Clamping -- plasma ignite and ESC sequencing   ·  Non-Uniform RF in High-Temperature ESC -- dielectric thickness variation   ·  Non-Uniform RF Due to Large Particle on ESC -- 100-200 um Si particle   ·  Baffle for Down Stream Etcher -- blocking ions and UV   UV and Charging During Via Etch Cause EPROM Charge Loss (NBTI mechanism)   Free Fluorine Involved in Charging Damage in a RF/MW Plasma Asher (76 KB) Vol. 4, No. 2 (Fall 2001)   CHARM-2 improves 300 mm tools!   Feature Article: Guidelines for interpreting CHARM-2 data.   ·  Approaches to reducing/eliminating charging damage.   ·  How to compare tools/processes.   ·  Is your process safe?   ·  What about UV?   ·  Process optimization and DOE. (396 KB) Vol. 4, No. 1 (Summer 2001)   WCM expands in-house test capability!   Feature Article: Typical charging patterns and what they mean.   ·  Systematic pattern of a simple non-uniform plasma.   ·  Random pattern of an unstable plasma.   ·  Complex pattern of a multiple charging-event plasma process.   News from the ECS Semiconductor Technology Conference in Shanghai.   CHARM-2 application procedures for all kinds of plasma equipment. (205 KB) Vol. 3, No. 1 (Fall 2000)   Latest ChargeMap completely automates CHARM-2 data analysis!   WCM improves turn-around with new in-house test facility.   New "maximum-response" CHARM-2 measures worst-case charging.   Electron shading or plasma non-uniformity -- which is the real culprit?   CHARM-2 procedures for ashing, implant, etching, and deposition. (49 KB) Vol. 2, No. 2 (Fall 1999)   Relating CHARM®-2 results to implant and plasma damage   ·  Effect of test structure -- CHARM®-2 compared to SPIDER-MEM   ·  Effect of device physics -- N vs. P channel, well vs. substrate, UV   ·  Effect of evolving device structure at each step in process (385 KB) Vol. 2, No. 1 (Spring 1999)     Introducing DamageMap™     Charging in Oxide Deposition     More on P2ID'99 (44 KB) Vol. 1, No. 2 (Fall 1998)     IIT'98 Paper Summaries     P2ID'98 Paper Summaries (93 KB) Vol. 1, No. 1 (Spring 1998)     J-V Plots and Gate Oxide Damage Prediction     Charging Damage in a Resist Asher

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